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| Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 60 43 125 175 34 UNIT V A W C m PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 60 60 30 43 31 172 125 175 175 UNIT V V V A A A W C C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS minimum footprint, FR4 board (see Fig. 18). TYP. 50 MAX. 1.2 UNIT K/W K/W August 1995 1 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK465-60H STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 60 V; VGS = 0 V; Tj = 25 C VDS = 60 V; VGS = 0 V; Tj =125 C VGS = 30 V; VDS = 0 V VGS = 10 V; ID = 20 A MIN. 60 2.1 TYP. 3.0 1 0.1 10 24 MAX. 4.0 10 1.0 100 34 UNIT V V A mA nA m DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 20 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 ; Rgen = 50 Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad MIN. 8 TYP. 13.5 1000 470 180 25 60 125 100 2.5 7.5 MAX. 1600 600 275 40 90 160 130 UNIT S pF pF pF ns ns ns ns nH nH REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 43 A ; VGS = 0 V IF = 43 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 30 V MIN. TYP. 0.95 60 0.30 MAX. 43 172 2.0 UNIT A A V ns C AVALANCHE LIMITING VALUE Tmb = 25 C unless otherwise specified SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 43 A ; VDD 25 V ; VGS = 10 V ; RGS = 50 MIN. TYP. MAX. 100 UNIT mJ August 1995 2 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK465-60H 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 10 Zth j-mb / (K/W) BUKx55-lv 1 D= 0.5 0.2 0.1 0.05 0.02 0 P D tp D= tp T t 1E+01 0.1 0.01 0 20 40 60 80 100 Tmb / C 120 140 160 180 0.001 1E-07 T 1E-05 1E-03 t/s 1E-01 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb) ID% Normalised Current Derating 100 Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T ID / A 15 20 80 10 9 VGS / V = 8 BUK4Y5-60H 120 110 100 90 80 70 60 50 40 30 20 10 0 60 7 6.5 40 6 5.5 20 5 4 0 20 40 60 80 100 Tmb / C 120 140 160 180 0 0 2 4 VDS / V 6 8 10 Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 5 V Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS RDS(ON) / Ohm 4.5 5 5.5 6 6.5 7 BUK4Y5-60H 1000 ID / A BUK455-60H 0.2 100 R DS N (O )= V / DS ID tp = 10 us 100 us 0.15 VGS / V = 8 0.1 10 DC 1 ms 10 ms 100 ms 10 0.05 9 15 1 1 10 VDS / V 100 0 0 20 40 ID / A 60 80 100 Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS August 1995 3 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK465-60H 100 ID / A BUK4Y5-60H 4 VGS(TO) / V max. 80 typ. 3 60 min. 2 40 1 -40 25 150 20 Tj / C = 0 0 0 2 4 6 VGS / V 8 10 12 -60 -20 20 60 Tj / C 100 140 180 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj gfs / S BUK4Y5-60H Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS ID / A SUB-THRESHOLD CONDUCTION 30 25 20 15 1E-01 1E-02 1E-03 2% typ 98 % 1E-04 10 Tj / C = 1E-05 -40 25 150 5 0 1E-06 0 20 40 ID / A 60 80 100 0 1 2 VGS / V 3 4 Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 10 V a Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS C / pF 10000 2.0 Normalised RDS(ON) = f(Tj) BUK4Y5-60H Ciss Coss Crss 1.5 1.0 1000 0.5 0 -60 -20 20 60 Tj / C 100 140 180 100 0.1 1 VDS / V 10 100 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 20 A; VGS = 5 V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz August 1995 4 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK465-60H 20 VGS / V BUK4Y5-60H 120 110 100 WDSS% 15 VDD / V = 12 48 10 90 80 70 60 50 40 5 30 20 10 0 0 10 20 30 QG / nC 40 50 60 0 20 40 60 80 100 120 Tmb / C 140 160 180 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 43 A; parameter VDS IS / A 100 Tj / C = -40 25 150 Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 43 A BUKXY5-60H + L VDS VDD 80 60 VGS 40 -ID/100 T.U.T. R 01 shunt 0 RGS 20 0 0 0.5 VSDS / V 1 1.5 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS - VDD ) August 1995 5 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK465-60H MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max 4.5 max 1.4 max 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.17. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.18. SOT404 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". August 1995 6 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK465-60H DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1995 7 Rev 1.000 |
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